磁控溅射制备高循环稳定性的氟氧化铜薄膜研究

Translated title of the contribution: Preparation of copper oxyfluoride films with high cycling stability by magnetron sputtering

宋世湃, 彭翔, 彭晓丽, 张晓琨, 向勇*

*Corresponding author for this work

Research output: Journal PublicationsJournal Article (refereed)peer-review

Abstract

以二水氟化铜 (CuF2·2H2O) 为靶材,采用磁控溅射薄膜沉积工艺,制备了具有高循环稳定性的氟氧化铜薄膜。研究了工作气压对薄膜形貌、厚度及成分的影响。X射线光电子能谱和循环伏安分析结果表明薄膜内部存在Cu—O键和Cu—F键,以及单质铜。0.55 Pa制备的氟氧化铜薄膜主要成分为2.4Cu-1.25CuO-0.5CuF2,50周循环可逆充放电比容量约为340 mAh/g。结果表明,磁控溅射方式能有效降低OH~-的比例,实现氟氧化物电极的制备,提高了转化反应电极材料在高比能锂电池中的应用潜力。

Using the dihydrate copper fluoride (CuF2·2H2O) as the target, copper oxyfluoride thin-films with high cycling stability were prepared by magnetron sputtering. The effects of the working pressure on the morphology, thickness and composition of the films were studied. X-ray photoelectron spectroscopy was used to investigate the chemical composition of the surface and inside of the films, and the oxidation-reduction potential of the films was determined by cyclic voltammetry. Cu-O, Cu-F and Cu were identified in the as-prepared thin-films. The main components of the copper oxyfluoride film deposited at 0.55 Pa are 2.4 Cu-1.25 CuO-0.5 CuF2, and the reversible capacity of 340 mAh/g is maintained in 50 charge-discharge cycles. The results show that the magnetron sputtering method can effectively reduce the ratio of OH- and realize the preparation of oxyfluoride electrode.
Translated title of the contributionPreparation of copper oxyfluoride films with high cycling stability by magnetron sputtering
Original languageChinese (Simplified)
Pages (from-to)28-34
Number of pages7
Journal电子元件与材料
Volume39
Issue number7
DOIs
Publication statusPublished - 5 Jul 2020
Externally publishedYes

Bibliographical note

基金 : 国家自然科学基金 (21905040) 、国家重点研发计划 (2017YFB0702802)。

Keywords

  • 二水氟化铜 (CuF2·2H2O)
  • 氟氧化铜
  • 磁控溅射
  • 循环稳定性
  • dihydrate copper fluoride (CuF2·2H2O)
  • copper oxyfluoride
  • magnetron sputtering
  • cycling stability

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