TY - JOUR
T1 - BiFeO3-SrTiO3 thin film as a new lead-free relaxor-ferroelectric capacitor with ultrahigh energy storage performance
AU - PAN, Hao
AU - ZENG, Yi
AU - SHEN, Yang
AU - LIN, Yuan-Hua
AU - MA, Jing
AU - LI, Liangliang
AU - NAN, Ce-Wen
N1 - The authors would like to acknowledge the financial support from the Ministry of Science and Technology of China through a 973-Project under Grant No. 2015CB654603, the Natural Science Foundation of China under Grant No. 51532003, 51221291 and 51328203, and NSFC-Guangdong United Fund under Grant No. U1501246.
PY - 2017
Y1 - 2017
N2 - Capacitors with high electrostatic energy density, long-term stability, and environmental friendliness are strongly demanded in modern electrical and electronic systems. Here, we obtained a new lead-free relaxor-ferroelectric Mn-doped 0.4BiFeO3-0.6SrTiO3 (BFSTO) thin film capacitor with an ultrahigh energy density of ∼51 J cm-3, which is superior to other lead-free systems and comparable with the best lead-based films. The breakdown strength of the BFSTO film reached ∼3.6 MV cm-1. Besides, the thin film capacitor showed strong fatigue endurance after 2 × 107 cycles and possessed good thermal stability of energy storage performance in a wide temperature range (-40-140 °C). These excellent features should be ascribed to the good epitaxial quality, strong relaxor behavior, and suppressed leakage current of the film. The results prove the great potential of the BFSTO film for electrostatic energy storage. More importantly, our findings could motivate the design and fabrication of a series of BiFeO3-based dielectrics with suppressed leakage currents and high breakdown strength to develop a new kind of lead-free dielectric material with ultrahigh energy storage performance.
AB - Capacitors with high electrostatic energy density, long-term stability, and environmental friendliness are strongly demanded in modern electrical and electronic systems. Here, we obtained a new lead-free relaxor-ferroelectric Mn-doped 0.4BiFeO3-0.6SrTiO3 (BFSTO) thin film capacitor with an ultrahigh energy density of ∼51 J cm-3, which is superior to other lead-free systems and comparable with the best lead-based films. The breakdown strength of the BFSTO film reached ∼3.6 MV cm-1. Besides, the thin film capacitor showed strong fatigue endurance after 2 × 107 cycles and possessed good thermal stability of energy storage performance in a wide temperature range (-40-140 °C). These excellent features should be ascribed to the good epitaxial quality, strong relaxor behavior, and suppressed leakage current of the film. The results prove the great potential of the BFSTO film for electrostatic energy storage. More importantly, our findings could motivate the design and fabrication of a series of BiFeO3-based dielectrics with suppressed leakage currents and high breakdown strength to develop a new kind of lead-free dielectric material with ultrahigh energy storage performance.
UR - http://www.scopus.com/inward/record.url?scp=85016043662&partnerID=8YFLogxK
U2 - 10.1039/c7ta00665a
DO - 10.1039/c7ta00665a
M3 - Journal Article (refereed)
AN - SCOPUS:85016043662
SN - 2050-7488
VL - 5
SP - 5920
EP - 5926
JO - Journal of Materials Chemistry A
JF - Journal of Materials Chemistry A
IS - 12
ER -
