Abstract
Large-scale uniform ternary ZnIn2S4 nanosheet array films have been grown on indium-tin oxide (ITO) glass substrates effectively by a simple direct elemental reaction route. Inorganic-organic bulk heterojunction photovoltaic devices were fabricated with ZnIn2S4 film as an electron acceptor and poly (2-methoxy-5-(2/-ethylhexoxy)-1,4-phenylene vinylene (MEH-PPV) polymer as electron donor. The formation of the ZnIn 2S4 nanosheet film was characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and UV-VIS-NIR spectroscopy. The as-prepared ZnIn2S4 nanosheet film was demonstrated as an n-type semiconductor exhibiting an apparent photocurrent response and good photostability. The photovoltaic performance of the constructed solar cell device with the active structure of ITO/ZnIn 2S4:MEH-PPV/Au was evaluated at room temperature under AM1.5G (100 mW cm-2) simulated globe sun illumination from a filtered Xenon lamp.
| Original language | English |
|---|---|
| Pages (from-to) | 8909-8914 |
| Number of pages | 6 |
| Journal | RSC Advances |
| Volume | 3 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 21 Jun 2013 |
| Externally published | Yes |
Funding
This work was supported by National Natural Science Foundation of China (Grant No. 61204009, 21273192), Program for Science & Technology Innovation Teams in Universities of Henan Province (2012 IRTSTHN021), Innovation Scientists and Technicians Troop Construction Projects of Henan Province (Grant No. 104100510001), Innovation Scientists and Technicians Team Projects of Henan Province Program for Basic and Advanced Technology of Henan Province (Grant No. 112300410106, 124300510055), Research Key Projects of Science and Technology of Henan Province (Grant No. 12A150022) and Natural Science Foundation of Henan Province, China (Grant No. 2009B150024 and 2011B150035).
