Design of a 4-level active photonics phase change switch using VO2 and Ge2Sb2Te5

Yun MENG; Jitendra K. BEHERA; Yujie KE; Litian CHEW; Yang WANG; Yi LONG; Robert E. SIMPSON

doi:10.1063/1.5043521

Design of a 4-level active photonics phase change switch using VO₂ and Ge₂Sb₂Te₅

Yun MENG, Jitendra K. BEHERA, Yujie KE, Litian CHEW, Yang WANG, Yi LONG^*, Robert E. SIMPSON^*

^*Corresponding author for this work

Research output: Journal Publications › Journal Article (refereed) › peer-review

33 Citations (Scopus)

Abstract

The objective of this work is to design and demonstrate multilevel optical switches by combining different phase change materials. Ge₂Sb₂Te₅ and VO₂ nanolayer structures were designed to maximize the optical contrast between four different reflective states. These different optical states arise due to the independent structural phase transitions of VO₂and Ge₂Sb₂Te₅ at different temperatures. The transfer matrix method was used to model Fresnel reflection for each structural phase combination and then to optimize the VO₂ and Ge₂Sb₂Te₅ layer thicknesses, which were found to be 70 nm and 50 nm. These multilevel optical switching results provide further possibilities to design composite materials for applications in active and programmable photonics.

Original language	English
Article number	071901
Journal	Applied Physics Letters
Volume	113
Issue number	7
DOIs	https://doi.org/10.1063/1.5043521
Publication status	Published - 13 Aug 2018
Externally published	Yes

Bibliographical note

This research was performed under the auspices of the SUTD-MIT International design center (IDC) and funded by the A-Star Singapore-China Joint Research Program (Grant No. 1420200046). Y. Ke and Y. Long acknowledge the funding support from the National Research Foundation, Prime Ministers Office, Singapore, under its Campus of Research Excellence and Technological Enterprise (CREATE) programme, Ministry of Education (MOE) Tier one, RG124/16. Y. Meng is grateful to the China Scholarship Council (CSC) for funding his research experience at SUTD.

Access to Document

10.1063/1.5043521

Cite this

@article{a9d9874cf8b543b6bf93ba434548d030,

title = "Design of a 4-level active photonics phase change switch using VO2 and Ge2Sb2Te5",

abstract = "The objective of this work is to design and demonstrate multilevel optical switches by combining different phase change materials. Ge2Sb2Te5 and VO2 nanolayer structures were designed to maximize the optical contrast between four different reflective states. These different optical states arise due to the independent structural phase transitions of VO2 and Ge2Sb2Te5 at different temperatures. The transfer matrix method was used to model Fresnel reflection for each structural phase combination and then to optimize the VO2 and Ge2Sb2Te5 layer thicknesses, which were found to be 70 nm and 50 nm. These multilevel optical switching results provide further possibilities to design composite materials for applications in active and programmable photonics.",

author = "Yun MENG and BEHERA, {Jitendra K.} and Yujie KE and Litian CHEW and Yang WANG and Yi LONG and SIMPSON, {Robert E.}",

note = "This research was performed under the auspices of the SUTD-MIT International design center (IDC) and funded by the A-Star Singapore-China Joint Research Program (Grant No. 1420200046). Y. Ke and Y. Long acknowledge the funding support from the National Research Foundation, Prime Ministers Office, Singapore, under its Campus of Research Excellence and Technological Enterprise (CREATE) programme, Ministry of Education (MOE) Tier one, RG124/16. Y. Meng is grateful to the China Scholarship Council (CSC) for funding his research experience at SUTD.",

year = "2018",

month = aug,

day = "13",

doi = "10.1063/1.5043521",

language = "English",

volume = "113",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Design of a 4-level active photonics phase change switch using VO2 and Ge2Sb2Te5

AU - MENG, Yun

AU - BEHERA, Jitendra K.

AU - KE, Yujie

AU - CHEW, Litian

AU - WANG, Yang

AU - LONG, Yi

AU - SIMPSON, Robert E.

N1 - This research was performed under the auspices of the SUTD-MIT International design center (IDC) and funded by the A-Star Singapore-China Joint Research Program (Grant No. 1420200046). Y. Ke and Y. Long acknowledge the funding support from the National Research Foundation, Prime Ministers Office, Singapore, under its Campus of Research Excellence and Technological Enterprise (CREATE) programme, Ministry of Education (MOE) Tier one, RG124/16. Y. Meng is grateful to the China Scholarship Council (CSC) for funding his research experience at SUTD.

PY - 2018/8/13

Y1 - 2018/8/13

N2 - The objective of this work is to design and demonstrate multilevel optical switches by combining different phase change materials. Ge2Sb2Te5 and VO2 nanolayer structures were designed to maximize the optical contrast between four different reflective states. These different optical states arise due to the independent structural phase transitions of VO2 and Ge2Sb2Te5 at different temperatures. The transfer matrix method was used to model Fresnel reflection for each structural phase combination and then to optimize the VO2 and Ge2Sb2Te5 layer thicknesses, which were found to be 70 nm and 50 nm. These multilevel optical switching results provide further possibilities to design composite materials for applications in active and programmable photonics.

AB - The objective of this work is to design and demonstrate multilevel optical switches by combining different phase change materials. Ge2Sb2Te5 and VO2 nanolayer structures were designed to maximize the optical contrast between four different reflective states. These different optical states arise due to the independent structural phase transitions of VO2 and Ge2Sb2Te5 at different temperatures. The transfer matrix method was used to model Fresnel reflection for each structural phase combination and then to optimize the VO2 and Ge2Sb2Te5 layer thicknesses, which were found to be 70 nm and 50 nm. These multilevel optical switching results provide further possibilities to design composite materials for applications in active and programmable photonics.

UR - http://www.scopus.com/inward/record.url?scp=85051446276&partnerID=8YFLogxK

U2 - 10.1063/1.5043521

DO - 10.1063/1.5043521

M3 - Journal Article (refereed)

AN - SCOPUS:85051446276

SN - 0003-6951

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071901

ER -

Design of a 4-level active photonics phase change switch using VO₂ and Ge₂Sb₂Te₅

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this