Electrical Parameter Control for Semiconductor Device Manufacturing : a Fabwide Approach

Clare SCHOENE; S. Joe QIN; Erhan KUTANOGLU; John STUBER

doi:10.3182/20070606-3-MX-2915.00070

Electrical Parameter Control for Semiconductor Device Manufacturing : a Fabwide Approach

Clare SCHOENE, S. Joe QIN, Erhan KUTANOGLU, John STUBER

Research output: Journal Publications › Journal Article (refereed) › peer-review

1 Citation (Scopus)

Abstract

Wafers that fail to meet their electrical specifications lead to scrap which negatively impacts yield and manufacturing costs. Most existing research has focused on controlling individual steps during the manufacturing process via run-to-run control, but almost no work has looked at directly controlling the electrical characteristics. A control scheme is proposed to directly control electrical parameter values. The control algorithm uses a model to predict electrical parameter values after each processing step and determines optimal adjustments for the future processing steps. Simulation results show significant reduction in electrical parameter variations for both constrained and unconstrained control.

Original language	English
Pages (from-to)	135-140
Number of pages	6
Journal	IFAC Proceedings Volumes
Volume	40
Issue number	5
DOIs	https://doi.org/10.3182/20070606-3-MX-2915.00070
Publication status	Published - 2007
Externally published	Yes
Event	8th IFAC Symposium on Dynamics and Control of Process Systems, 2007 - , Mexico Duration: 6 Jun 2016 → 8 Jun 2016

Bibliographical note

ISBN: 9783902661647 <br/>This work was supported by JSPS KAKENHI Grant No. JP16K10904.

Keywords

Hierarchical control
Least squares estimation
Multi-step controllers

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10.3182/20070606-3-MX-2915.00070

Cite this

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title = "Electrical Parameter Control for Semiconductor Device Manufacturing : a Fabwide Approach",

abstract = "Wafers that fail to meet their electrical specifications lead to scrap which negatively impacts yield and manufacturing costs. Most existing research has focused on controlling individual steps during the manufacturing process via run-to-run control, but almost no work has looked at directly controlling the electrical characteristics. A control scheme is proposed to directly control electrical parameter values. The control algorithm uses a model to predict electrical parameter values after each processing step and determines optimal adjustments for the future processing steps. Simulation results show significant reduction in electrical parameter variations for both constrained and unconstrained control.",

keywords = "Hierarchical control, Least squares estimation, Multi-step controllers",

author = "Clare SCHOENE and QIN, {S. Joe} and Erhan KUTANOGLU and John STUBER",

note = "ISBN: 9783902661647 <br/>This work was supported by JSPS KAKENHI Grant No. JP16K10904.; 8th IFAC Symposium on Dynamics and Control of Process Systems, 2007 ; Conference date: 06-06-2016 Through 08-06-2016",

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T1 - Electrical Parameter Control for Semiconductor Device Manufacturing : a Fabwide Approach

AU - SCHOENE, Clare

AU - QIN, S. Joe

AU - KUTANOGLU, Erhan

AU - STUBER, John

N1 - ISBN: 9783902661647 <br/>This work was supported by JSPS KAKENHI Grant No. JP16K10904.

PY - 2007

Y1 - 2007

N2 - Wafers that fail to meet their electrical specifications lead to scrap which negatively impacts yield and manufacturing costs. Most existing research has focused on controlling individual steps during the manufacturing process via run-to-run control, but almost no work has looked at directly controlling the electrical characteristics. A control scheme is proposed to directly control electrical parameter values. The control algorithm uses a model to predict electrical parameter values after each processing step and determines optimal adjustments for the future processing steps. Simulation results show significant reduction in electrical parameter variations for both constrained and unconstrained control.

AB - Wafers that fail to meet their electrical specifications lead to scrap which negatively impacts yield and manufacturing costs. Most existing research has focused on controlling individual steps during the manufacturing process via run-to-run control, but almost no work has looked at directly controlling the electrical characteristics. A control scheme is proposed to directly control electrical parameter values. The control algorithm uses a model to predict electrical parameter values after each processing step and determines optimal adjustments for the future processing steps. Simulation results show significant reduction in electrical parameter variations for both constrained and unconstrained control.

KW - Hierarchical control

KW - Least squares estimation

KW - Multi-step controllers

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U2 - 10.3182/20070606-3-MX-2915.00070

DO - 10.3182/20070606-3-MX-2915.00070

M3 - Journal Article (refereed)

SN - 1474-6670

VL - 40

SP - 135

EP - 140

JO - IFAC Proceedings Volumes

JF - IFAC Proceedings Volumes

IS - 5

T2 - 8th IFAC Symposium on Dynamics and Control of Process Systems, 2007

Y2 - 6 June 2016 through 8 June 2016

ER -

Electrical Parameter Control for Semiconductor Device Manufacturing : a Fabwide Approach

Abstract

Bibliographical note

Keywords

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