Fabricating and TCAD Optimization for a SiC Trench MOSFET With Tilted P-Shielding Implantation and Integrated TJBS

Bo YI*, Huan LI, Bingke ZHANG*, Yi XU, Wenkun SHI, Yong XIANG, Rong ZHOU, Junji CHENG, Haimeng HUANG, Moufu KONG, Hongqiang YANG

*Corresponding author for this work

Research output: Journal PublicationsJournal Article (refereed)peer-review

Abstract

In this article, we proposed and fabricated a prototype of single-channel SiC trench MOSFET with integrated trench junction barrier Schottky (TJBS) on the trench side for 1200-V application, named TJBS-MOS. The TJBS is protected by the grounded P+ shielding layers under the gate and trench bottom. The measured specific ON-resistance (RON,sp) is 5.95 mΩ⋅cm2, with reverse conducting ON-state voltage VR_ON = 2.6 V at 300 A/cm2, which is reduced by 2.0 V compared with that of the CoolSiC MOSFET. Utilizing TCAD calibration according to the measured results, optimized results show that for the 1200-V-rated TJBS-MOS, RON,sp of 2.52 mΩ⋅cm2 with VR_ON = 2.04 V at 300 A/cm2 is obtained. Due to reduced channel density, RON,sp is increased by 24.8% compared to a CoolSiC MOSFET with the same design rules. Fortunately, a high-frequency figure of merit (HFFOM1: RON,sp × CGD and HFFOM2: RON,sp × QGD) are improved by 57.2% and 72.9%, respectively, owing to smaller CGD and QGD. Combined with reduced reverse recovery charge for the unipolar TJBS, the turn-on loss (EON) and the turn-off loss (EOFF) at 25 °C are reduced by 32.8% and 80.7%, respectively. Moreover, under high temperatures, EON of the CoolSiC MOSFET increases significantly, while EON of the TJBS-MOS remains unchanged.
Original languageEnglish
Pages (from-to)1618-1625
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume71
Issue number3
Early online date13 Feb 2024
DOIs
Publication statusPublished - Mar 2024
Externally publishedYes

Bibliographical note

Funding Agency: 10.13039/501100002858-China Postdoctoral Science Foundation (Grant Number: 2020M683661XB)
Publisher Copyright: © 1963-2012 IEEE.

Keywords

  • Integrated trench junction barrier Schottky (TJBS)
  • reverse ON-state voltage drop
  • SiC trench MOSFET
  • specific ON-resistance
  • turn-on loss

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