Abstract
Electric field manipulation of magnetic properties has attracted a lot of research interest recently in solid-state physics. However, ferroelectric strain modulation of antiferromagnetic (AFM) layer is rarely studied in ferromagnet/antiferromagnet/ferroelectric heterostructures. In this paper, we prepared a Ni/NiO(001) heterostructure on ferroelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3(001) substrates and observed an out-of-plane electric field modulation of exchange bias and magnetic anisotropy in the Ni layer. The exchange bias was easily eliminated by an electric field cycle, which was due to the AFM domain switching induced by piezoelectric strain in the NiO layer. Synchrotron x ray linear dichroism results confirmed the AFM moment alignment induced by ferroelectric strain as well. Our work showed a promising strategy to manipulate AFM moments and domains, serving the blooming AFM spintronics.
Original language | English |
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Article number | 174420 |
Journal | Physical Review B |
Volume | 95 |
Issue number | 17 |
DOIs | |
Publication status | Published - 15 May 2017 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2017 American Physical Society.
Funding
This paper was financially supported by National Key Research Programme of China (Grant No. 2016YFA0201003), National Key Project of Research and Development Plan of China (Grant No. 2016YFA0300103), and National Science Foundation of China (Grants No. 51328203, No. 51332001, and No. 51532003). We are also grateful for the discussion and support provided by the staff of Beamline BL08U1A of Shanghai Synchrotron Radiation Facility.