TY - JOUR
T1 - First-principles study of the defected phosphorene under tensile strain
AU - HAO, Feng
AU - CHEN, Xi
N1 - The authors acknowledge the support from ARPA-E (DE-AR0000396) and AFOSR (FA9550-12-1-0159).
PY - 2016/10/28
Y1 - 2016/10/28
N2 - By using first-principles calculations, we investigate the defected phosphorene with vacancies under tensile conditions, specifically focusing on its stress-strain relation, band gap, and Li diffusion through the double vacancy. The analysis of the stress-strain relation indicates that, owing to the presence of vacancies, the mechanical properties of phosphorene are significantly degraded in the zigzag direction, including the ideal strength and Young's modulus. Moreover, it is found that tensile strain produces a remarkable reduction in the band gap of the defected phosphorene, and Li diffusion through the defected phosphorene is more energetically favorable compared with the pristine phosphorene, which can be further enhanced under biaxial tension. © 2016 Author(s).
AB - By using first-principles calculations, we investigate the defected phosphorene with vacancies under tensile conditions, specifically focusing on its stress-strain relation, band gap, and Li diffusion through the double vacancy. The analysis of the stress-strain relation indicates that, owing to the presence of vacancies, the mechanical properties of phosphorene are significantly degraded in the zigzag direction, including the ideal strength and Young's modulus. Moreover, it is found that tensile strain produces a remarkable reduction in the band gap of the defected phosphorene, and Li diffusion through the defected phosphorene is more energetically favorable compared with the pristine phosphorene, which can be further enhanced under biaxial tension. © 2016 Author(s).
UR - http://www.scopus.com/inward/record.url?scp=84993967777&partnerID=8YFLogxK
U2 - 10.1063/1.4966167
DO - 10.1063/1.4966167
M3 - Journal Article (refereed)
SN - 0021-8979
VL - 120
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 16
M1 - 165104
ER -