Improvement on the Si/PEDOT:PSS hybrid solar cells by rear-sided passivation with SiNx:H layers

Yiling SUN, Jichun YE, Pingqi GAO, Yong XIANG

Research output: Book Chapters | Papers in Conference ProceedingsConference paper (refereed)Researchpeer-review

Abstract

A patterned silicon nitride (SiNx:H) passivation layer was employed to improve the performance of silicon/poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate) (Si/PEDOT:PSS) hybrid solar cells, achieving of an enhancement in the power conversion efficiency (PCE) of 0.6%. The insertion of patterned SiNx:H layer with a 80% SiNx:H-to-substrate ratio boosted the open circuit voltage (Voc) from 523.1 mV to 573.4 mV, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma enhanced chemical vapor deposition and lithography processes.
Original languageEnglish
Title of host publication Proceedings of the 2016 5th International Conference on Environment, Materials, Chemistry and Power Electronics
Editors Xingquan XIAO, Peikang HAN
PublisherAtlantis Press
Pages290-293
Number of pages4
Volume84
ISBN (Print)9789462521971
DOIs
Publication statusPublished - Aug 2016
Externally publishedYes
Event2016 5th International Conference on Environment, Materials, Chemistry and Power Electronics - Xi'an, China
Duration: 11 Apr 201612 Apr 2016

Publication series

Name Advances in Engineering Research
PublisherAtlantis Press
ISSN (Print)2352-5401

Conference

Conference2016 5th International Conference on Environment, Materials, Chemistry and Power Electronics
Period11/04/1612/04/16

Bibliographical note

© 2016, the Authors. Published by Atlantis Press.

Keywords

  • Si/PEDOT:PSS
  • hybrid solar cells
  • SiNx:H passivation

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