Abstract
A novel trench IGBT with a high-k (HK) buried layer below the trench gate is proposed and investigated by simulation. The HK dielectric causes a self-adapted assistant depletion of the n enhancement layer. This not only increases the n enhancement layer doping concentration and thus lowers the on-state losses without compromising the switching performance or the breakdown rating. The forward voltage drop of the proposed device reduces by 40% compared with that of a conventional FS IGBT.
Original language | English |
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Title of host publication | 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 : Proceedings |
Editors | Yu-Long JIANG, Ting-Ao TANG, Ru HUANG |
Publisher | IEEE |
Pages | 401-403 |
Number of pages | 3 |
ISBN (Electronic) | 9781467397179 |
DOIs | |
Publication status | Published - Oct 2016 |
Externally published | Yes |
Event | 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China Duration: 25 Oct 2016 → 28 Oct 2016 |
Conference
Conference | 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 |
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Country/Territory | China |
City | Hangzhou |
Period | 25/10/16 → 28/10/16 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.