Low on-state losses trench IGBT with high-k dielectric layer

Wei WU, Yong XIANG, Hong JI

Research output: Book Chapters | Papers in Conference ProceedingsConference paper (refereed)Researchpeer-review

Abstract

A novel trench IGBT with a high-k (HK) buried layer below the trench gate is proposed and investigated by simulation. The HK dielectric causes a self-adapted assistant depletion of the n enhancement layer. This not only increases the n enhancement layer doping concentration and thus lowers the on-state losses without compromising the switching performance or the breakdown rating. The forward voltage drop of the proposed device reduces by 40% compared with that of a conventional FS IGBT.

Original languageEnglish
Title of host publication2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 : Proceedings
EditorsYu-Long JIANG, Ting-Ao TANG, Ru HUANG
PublisherIEEE
Pages401-403
Number of pages3
ISBN (Electronic)9781467397179
DOIs
Publication statusPublished - Oct 2016
Externally publishedYes
Event13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China
Duration: 25 Oct 201628 Oct 2016

Conference

Conference13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
Country/TerritoryChina
CityHangzhou
Period25/10/1628/10/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

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