Measuring the elastic modulus and ultimate strength of low-k dielectric materials by means of the bulge test

Yong XIANG; Ting Y. TSUI; Joost J. VLASSAK; Andrew J. MCKERROW

doi:10.1109/IITC.2004.1345717

Measuring the elastic modulus and ultimate strength of low-k dielectric materials by means of the bulge test

Yong XIANG^*, Ting Y. TSUI, Joost J. VLASSAK, Andrew J. MCKERROW

^*Corresponding author for this work

Research output: Book Chapters | Papers in Conference Proceedings › Conference paper (refereed) › Research › peer-review

13 Citations (Scopus)

Abstract

The mechanical properties of organosilicate glass (OSG) thin films were measured for the first time using bulge testing of OSG / silicon nitride (SiN _x) freestanding membranes. Evaluation of two different OSG films revealed significant differences in Young's modulus and residual stress between the two dielectric films. Young's modulus of both types of OSGs was independently measured using nanoindentation and found to be at least 8.5-17% greater than that measured using the bulge test. It is well known, and demonstrated herein, that modulus data obtained from nanoindentation is influenced by mechanical properties of the substrate. Operating without this constraint, it is believed that data obtained using the bulge test more accurately represents the intrinsic mechanical properties of OSG thin films.

Original language	English
Title of host publication	Proceedings of the IEEE 2004 International Interconnect Technology Conference
Publisher	IEEE
Pages	133-135
Number of pages	3
ISBN (Print)	9780780383081
DOIs	https://doi.org/10.1109/IITC.2004.1345717
Publication status	Published - 2004
Externally published	Yes
Event	The IEEE 2004 International Interconnect Technology Conference - Burlingame, United States Duration: 7 Jun 2004 → 9 Jun 2004

Conference

Conference	The IEEE 2004 International Interconnect Technology Conference
Abbreviated title	IITC 2004
Country/Territory	United States
City	Burlingame
Period	7/06/04 → 9/06/04

Bibliographical note

Acknowledgments: The authors gratefully acknowledge the support from NSF (DMR-0133559, DMR-0215902), the Harvard Division of Engineering and Applied Sciences, and Texas Instruments Inc, Silicon Technology Development.

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10.1109/IITC.2004.1345717

Cite this

@inproceedings{6d1ff6f484d2462c8fbe6ecf4308643c,

title = "Measuring the elastic modulus and ultimate strength of low-k dielectric materials by means of the bulge test",

abstract = "The mechanical properties of organosilicate glass (OSG) thin films were measured for the first time using bulge testing of OSG / silicon nitride (SiN x) freestanding membranes. Evaluation of two different OSG films revealed significant differences in Young's modulus and residual stress between the two dielectric films. Young's modulus of both types of OSGs was independently measured using nanoindentation and found to be at least 8.5-17% greater than that measured using the bulge test. It is well known, and demonstrated herein, that modulus data obtained from nanoindentation is influenced by mechanical properties of the substrate. Operating without this constraint, it is believed that data obtained using the bulge test more accurately represents the intrinsic mechanical properties of OSG thin films.",

author = "Yong XIANG and TSUI, {Ting Y.} and VLASSAK, {Joost J.} and MCKERROW, {Andrew J.}",

note = "Acknowledgments: The authors gratefully acknowledge the support from NSF (DMR-0133559, DMR-0215902), the Harvard Division of Engineering and Applied Sciences, and Texas Instruments Inc, Silicon Technology Development.; The IEEE 2004 International Interconnect Technology Conference, IITC 2004 ; Conference date: 07-06-2004 Through 09-06-2004",

year = "2004",

doi = "10.1109/IITC.2004.1345717",

language = "English",

isbn = "9780780383081",

pages = "133--135",

booktitle = "Proceedings of the IEEE 2004 International Interconnect Technology Conference",

publisher = "IEEE",

}

XIANG, Y, TSUI, TY, VLASSAK, JJ & MCKERROW, AJ 2004, Measuring the elastic modulus and ultimate strength of low-k dielectric materials by means of the bulge test. in Proceedings of the IEEE 2004 International Interconnect Technology Conference. IEEE, pp. 133-135, The IEEE 2004 International Interconnect Technology Conference, Burlingame, California, United States, 7/06/04. https://doi.org/10.1109/IITC.2004.1345717

Measuring the elastic modulus and ultimate strength of low-k dielectric materials by means of the bulge test. / XIANG, Yong; TSUI, Ting Y.; VLASSAK, Joost J. et al.
Proceedings of the IEEE 2004 International Interconnect Technology Conference. IEEE, 2004. p. 133-135.

Research output: Book Chapters | Papers in Conference Proceedings › Conference paper (refereed) › Research › peer-review

TY - GEN

T1 - Measuring the elastic modulus and ultimate strength of low-k dielectric materials by means of the bulge test

AU - XIANG, Yong

AU - TSUI, Ting Y.

AU - VLASSAK, Joost J.

AU - MCKERROW, Andrew J.

N1 - Acknowledgments: The authors gratefully acknowledge the support from NSF (DMR-0133559, DMR-0215902), the Harvard Division of Engineering and Applied Sciences, and Texas Instruments Inc, Silicon Technology Development.

PY - 2004

Y1 - 2004

N2 - The mechanical properties of organosilicate glass (OSG) thin films were measured for the first time using bulge testing of OSG / silicon nitride (SiN x) freestanding membranes. Evaluation of two different OSG films revealed significant differences in Young's modulus and residual stress between the two dielectric films. Young's modulus of both types of OSGs was independently measured using nanoindentation and found to be at least 8.5-17% greater than that measured using the bulge test. It is well known, and demonstrated herein, that modulus data obtained from nanoindentation is influenced by mechanical properties of the substrate. Operating without this constraint, it is believed that data obtained using the bulge test more accurately represents the intrinsic mechanical properties of OSG thin films.

AB - The mechanical properties of organosilicate glass (OSG) thin films were measured for the first time using bulge testing of OSG / silicon nitride (SiN x) freestanding membranes. Evaluation of two different OSG films revealed significant differences in Young's modulus and residual stress between the two dielectric films. Young's modulus of both types of OSGs was independently measured using nanoindentation and found to be at least 8.5-17% greater than that measured using the bulge test. It is well known, and demonstrated herein, that modulus data obtained from nanoindentation is influenced by mechanical properties of the substrate. Operating without this constraint, it is believed that data obtained using the bulge test more accurately represents the intrinsic mechanical properties of OSG thin films.

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U2 - 10.1109/IITC.2004.1345717

DO - 10.1109/IITC.2004.1345717

M3 - Conference paper (refereed)

AN - SCOPUS:8644289435

SN - 9780780383081

SP - 133

EP - 135

BT - Proceedings of the IEEE 2004 International Interconnect Technology Conference

PB - IEEE

T2 - The IEEE 2004 International Interconnect Technology Conference

Y2 - 7 June 2004 through 9 June 2004

ER -

Measuring the elastic modulus and ultimate strength of low-k dielectric materials by means of the bulge test

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Bibliographical note

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