Mechanism of the Transition from In-Plane Buckling to Helical Buckling for a Stiff Nanowire on an Elastomeric Substrate

Youlong CHEN, Yong ZHU, Xi CHEN, Yilun LIU

Research output: Journal PublicationsJournal Article (refereed)peer-review

22 Citations (Scopus)

Abstract

In this work, the compressive buckling of a nanowire partially bonded to an elastomeric substrate is studied via finite-element method (FEM) simulations and experiments. The buckling profile of the nanowire can be divided into three regimes, i.e., the in-plane buckling, the disordered buckling in the out-of-plane direction, and the helical buckling, depending on the constraint density between the nanowire and the substrate. The selection of the buckling mode depends on the ratio d/h, where d is the distance between adjacent constraint points and h is the helical buckling spacing of a perfectly bonded nanowire. For d/h > 0.5, buckling is in-plane with wavelength λ = 2d. For 0.27 < d/h < 0.5, buckling is disordered with irregular out-of-plane displacement. While, for d/h < 0.27, buckling is helical and the buckling spacing gradually approaches to the theoretical value of a perfectly bonded nanowire. Generally, the in-plane buckling induces smaller strain in the nanowire, but consumes the largest space. Whereas the helical mode induces moderate strain in the nanowire, but takes the smallest space. The study may shed useful insights on the design and optimization of high-performance stretchable electronics and three-dimensional complex nanostructures.
Original languageEnglish
Article number41011
Number of pages6
JournalJournal of Applied Mechanics
Volume83
Issue number4
Early online date10 Feb 2016
DOIs
Publication statusPublished - Apr 2016
Externally publishedYes

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