Abstract
Optical emission spectroscopy (OES) data for 495 wavelengths and wafer measurements (pre- and postoxide film thichness) from a commercial etch tool were collected for 18 oxide wafers to explore the feasibility of using OES as an in-situ sensor to estimate average oxide etch rate. A variable selection method is proposed based on the principle of partial least square (PLS) regression, which select several most informative wavelengths to build ordinary least square (OLS) regression models. Compared with the PLS models, it is found that OLS regression models based on selected wavelengths are more robust.
Original language | English |
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Pages (from-to) | 108-118 |
Number of pages | 11 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3213 |
Early online date | 25 Aug 1997 |
DOIs | |
Publication status | Published - Oct 1997 |
Externally published | Yes |
Event | Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III - Austin, United States Duration: 1 Oct 1997 → 2 Oct 1997 |
Keywords
- Etch rate
- Optical emission spectroscopy
- Regression model