Modeling of OES data to estimate etch rate for etching equipment

Yi CHENG; Richard J. MARKLE; Joe QIN; Thomas F. EDGAR; Michael J. GATTO; Chris NAUERT

doi:10.1117/12.284627

Modeling of OES data to estimate etch rate for etching equipment

Yi CHENG^*, Richard J. MARKLE, Joe QIN, Thomas F. EDGAR, Michael J. GATTO, Chris NAUERT

^*Corresponding author for this work

Research output: Journal Publications › Journal Article (refereed) › peer-review

1 Citation (Scopus)

Abstract

Optical emission spectroscopy (OES) data for 495 wavelengths and wafer measurements (pre- and postoxide film thichness) from a commercial etch tool were collected for 18 oxide wafers to explore the feasibility of using OES as an in-situ sensor to estimate average oxide etch rate. A variable selection method is proposed based on the principle of partial least square (PLS) regression, which select several most informative wavelengths to build ordinary least square (OLS) regression models. Compared with the PLS models, it is found that OLS regression models based on selected wavelengths are more robust.

Original language	English
Pages (from-to)	108-118
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3213
Early online date	25 Aug 1997
DOIs	https://doi.org/10.1117/12.284627
Publication status	Published - Oct 1997
Externally published	Yes
Event	Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III - Austin, United States Duration: 1 Oct 1997 → 2 Oct 1997

Keywords

Etch rate
Optical emission spectroscopy
Regression model

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10.1117/12.284627

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@article{b79208b28919414fb04c743338965bbe,

title = "Modeling of OES data to estimate etch rate for etching equipment",

abstract = "Optical emission spectroscopy (OES) data for 495 wavelengths and wafer measurements (pre- and postoxide film thichness) from a commercial etch tool were collected for 18 oxide wafers to explore the feasibility of using OES as an in-situ sensor to estimate average oxide etch rate. A variable selection method is proposed based on the principle of partial least square (PLS) regression, which select several most informative wavelengths to build ordinary least square (OLS) regression models. Compared with the PLS models, it is found that OLS regression models based on selected wavelengths are more robust.",

keywords = "Etch rate, Optical emission spectroscopy, Regression model",

author = "Yi CHENG and MARKLE, {Richard J.} and Joe QIN and EDGAR, {Thomas F.} and GATTO, {Michael J.} and Chris NAUERT",

year = "1997",

month = oct,

doi = "10.1117/12.284627",

language = "English",

volume = "3213",

pages = "108--118",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III ; Conference date: 01-10-1997 Through 02-10-1997",

}

TY - JOUR

T1 - Modeling of OES data to estimate etch rate for etching equipment

AU - CHENG, Yi

AU - MARKLE, Richard J.

AU - QIN, Joe

AU - EDGAR, Thomas F.

AU - GATTO, Michael J.

AU - NAUERT, Chris

PY - 1997/10

Y1 - 1997/10

N2 - Optical emission spectroscopy (OES) data for 495 wavelengths and wafer measurements (pre- and postoxide film thichness) from a commercial etch tool were collected for 18 oxide wafers to explore the feasibility of using OES as an in-situ sensor to estimate average oxide etch rate. A variable selection method is proposed based on the principle of partial least square (PLS) regression, which select several most informative wavelengths to build ordinary least square (OLS) regression models. Compared with the PLS models, it is found that OLS regression models based on selected wavelengths are more robust.

AB - Optical emission spectroscopy (OES) data for 495 wavelengths and wafer measurements (pre- and postoxide film thichness) from a commercial etch tool were collected for 18 oxide wafers to explore the feasibility of using OES as an in-situ sensor to estimate average oxide etch rate. A variable selection method is proposed based on the principle of partial least square (PLS) regression, which select several most informative wavelengths to build ordinary least square (OLS) regression models. Compared with the PLS models, it is found that OLS regression models based on selected wavelengths are more robust.

KW - Etch rate

KW - Optical emission spectroscopy

KW - Regression model

UR - http://www.scopus.com/inward/record.url?scp=3843090829&partnerID=8YFLogxK

U2 - 10.1117/12.284627

DO - 10.1117/12.284627

M3 - Journal Article (refereed)

SN - 0277-786X

VL - 3213

SP - 108

EP - 118

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III

Y2 - 1 October 1997 through 2 October 1997

ER -

Modeling of OES data to estimate etch rate for etching equipment

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Keywords

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