Modeling of OES data to estimate etch rate for etching equipment

Yi CHENG*, Richard J. MARKLE, Joe QIN, Thomas F. EDGAR, Michael J. GATTO, Chris NAUERT

*Corresponding author for this work

Research output: Book Chapters | Papers in Conference ProceedingsConference paper (refereed)Researchpeer-review

1 Citation (Scopus)


Optical emission spectroscopy (OES) data for 495 wavelengths and wafer measurements (pre- and postoxide film thichness) from a commercial etch tool were collected for 18 oxide wafers to explore the feasibility of using OES as an in-situ sensor to estimate average oxide etch rate. A variable selection method is proposed based on the principle of partial least square (PLS) regression, which select several most informative wavelengths to build ordinary least square (OLS) regression models. Compared with the PLS models, it is found that OLS regression models based on selected wavelengths are more robust.
Original languageEnglish
Title of host publicationProceedings of SPIE : Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III
EditorsAbe GHANBARI, Anthony J. TOPRAC
Number of pages11
ISBN (Print)9780819426451
Publication statusPublished - Oct 1997
Externally publishedYes
EventMicroelectronic Manufacturing - Austin, United States
Duration: 1 Oct 19972 Oct 1997

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceMicroelectronic Manufacturing
Country/TerritoryUnited States


  • Etch rate
  • Optical emission spectroscopy
  • Regression model


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