TY - JOUR
T1 - Modulation of SiCnw morphology on C/C composite surfaces by adjusting CVR process parameters
AU - ZHOU, Zhe
AU - CHEN, Bin
AU - LI, Sha
AU - LIU, Jinao
AU - LIU, Kuihong
AU - MAO, Weiguo
AU - WANG, Jie
AU - FAN, Zheqiong
AU - ZUO, Jinglv
AU - DAI, Cuiying
AU - CHEN, Xi
N1 - Publisher Copyright:
© 2025 Elsevier Ltd
PY - 2025/9
Y1 - 2025/9
N2 - SiCnw with special morphology, such as bamboo-like and beaded shapes, has better reinforcing effect on metal and ceramic-based composite coatings. In this study, SiCnw was prepared in situ on the surface of C/C composites by chemical vapor reaction (CVR) method using Si, SiO2 and graphite as raw materials. The effects of heat treatment temperature, holding time and raw material ratio on the growth of SiCnw were investigated. The synthesized SiCnw is 3C-SiC with diameters between 100 nm and 300 nm and lengths up to tens of micrometers. Due to the influence of Si, SiO and CO saturation vapor pressures, with the heat treatment temperature and holding time increase, SiCnw’s yield increases and diameter becomes more homogeneous. The optimal preparation process for SiCnw was heat treatment at 1600 ℃ for 3 h. And SiCnw grows in different forms depending on the ration of raw material, such as hexagonal prisms (SiO2: 70%, Si:25%, C:5%), linear (SiO2: 70%, Si:20%, C:10%), pagod-like and needle-pricked shapes (SiO2: 60%, Si:25%, C:15%). The growth of SiCnw followed the vapor-solidification (VS) and spiral dislocation growth mechanism, grow in the direction of [111], and forms a tapered tip and leaves a cylindrical nanofilament at the tip.
AB - SiCnw with special morphology, such as bamboo-like and beaded shapes, has better reinforcing effect on metal and ceramic-based composite coatings. In this study, SiCnw was prepared in situ on the surface of C/C composites by chemical vapor reaction (CVR) method using Si, SiO2 and graphite as raw materials. The effects of heat treatment temperature, holding time and raw material ratio on the growth of SiCnw were investigated. The synthesized SiCnw is 3C-SiC with diameters between 100 nm and 300 nm and lengths up to tens of micrometers. Due to the influence of Si, SiO and CO saturation vapor pressures, with the heat treatment temperature and holding time increase, SiCnw’s yield increases and diameter becomes more homogeneous. The optimal preparation process for SiCnw was heat treatment at 1600 ℃ for 3 h. And SiCnw grows in different forms depending on the ration of raw material, such as hexagonal prisms (SiO2: 70%, Si:25%, C:5%), linear (SiO2: 70%, Si:20%, C:10%), pagod-like and needle-pricked shapes (SiO2: 60%, Si:25%, C:15%). The growth of SiCnw followed the vapor-solidification (VS) and spiral dislocation growth mechanism, grow in the direction of [111], and forms a tapered tip and leaves a cylindrical nanofilament at the tip.
KW - C/C composites
KW - Growth mechanism
KW - Morphology modulation
KW - SiCnw
UR - https://www.scopus.com/pages/publications/105011705310
U2 - 10.1016/j.mtcomm.2025.113415
DO - 10.1016/j.mtcomm.2025.113415
M3 - Journal Article (refereed)
SN - 2352-4928
VL - 48
JO - Materials Today Communications
JF - Materials Today Communications
M1 - 113415
ER -