TY - JOUR
T1 - Novel technique for measuring the mechanical properties of porous materials by nanoindentation
AU - CHEN, X.
AU - XIANG, Y.
AU - VLASSAK, J.J.
N1 - The work of Xi Chen is supported by National Science Foundation CMS-0407743. Joost Vlassak and Yong Xiang acknowledge financial support from National Science Foundation DMR-0213805 and from the Semiconductor Research Corporation (Task ID 12920.010).
PY - 2006
Y1 - 2006
N2 - A new technique for measuring the elastic-plastic properties of porous thin films by means of nanoindentation is proposed. The effects of porosity on indentation hardness and modulus are investigated through finite element analyses based on the Gurson model for plastic deformation of ductile porous materials. Intrinsic mechanical properties of the thin film are obtained by eliminating both substrate and densification effects. The technique is applied to the special case of a porous, low-permittivity dielectric thin film. The results are in good agreement with those obtained independently using the plane-strain bulge test. © 2006 Materials Research Society.
AB - A new technique for measuring the elastic-plastic properties of porous thin films by means of nanoindentation is proposed. The effects of porosity on indentation hardness and modulus are investigated through finite element analyses based on the Gurson model for plastic deformation of ductile porous materials. Intrinsic mechanical properties of the thin film are obtained by eliminating both substrate and densification effects. The technique is applied to the special case of a porous, low-permittivity dielectric thin film. The results are in good agreement with those obtained independently using the plane-strain bulge test. © 2006 Materials Research Society.
UR - http://www.scopus.com/inward/record.url?scp=33645108647&partnerID=8YFLogxK
U2 - 10.1557/jmr.2006.0088
DO - 10.1557/jmr.2006.0088
M3 - Journal Article (refereed)
SN - 0884-2914
VL - 21
SP - 715
EP - 724
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 3
ER -