P-6: Development of Advanced Etch-Stop Structures Oxide TFT

Fei SHANG; Yong XIANG; Rui WANG; Xiaolin WANG; Zhonghao HUANG; Zhuo XU; Shaoru LI; Zhulin LIU; Haijun QIU; Jianfeng YUAN; Taiye MIN; Xiaofeng MA; Yongliang ZHAO

doi:10.1002/sdtp.12102

P-6: Development of Advanced Etch-Stop Structures Oxide TFT

Fei SHANG, Yong XIANG, Rui WANG, Xiaolin WANG, Zhonghao HUANG, Zhuo XU, Shaoru LI, Zhulin LIU, Haijun QIU, Jianfeng YUAN, Taiye MIN, Xiaofeng MA, Yongliang ZHAO

Research output: Journal Publications › Journal Article (refereed) › peer-review

1 Citation (Scopus)

Abstract

Advanced Etch-Stop s tructure In-Ga-Zn-Oxide thin film transistor (A-ES TFT) using SD and IGZO layer self-aligned process is lower production cost, less parasitic capacitance than etch-stopped layer (ESL) Oxide TFTs. We also found excellent electrical properties and bias stability and fabricated a 12.5-inch liquid crystal panel using A-ES TFTs by only two photomask.

Original language	English
Pages (from-to)	1212-1214
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	49
Issue number	1
Early online date	30 May 2018
DOIs	https://doi.org/10.1002/sdtp.12102
Publication status	Published - May 2018
Externally published	Yes
Event	SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States Duration: 20 May 2018 → 25 May 2018

Bibliographical note

Publisher Copyright:
© 2018, Blackwell Publishing Ltd. All rights reserved.

Keywords

A-ES IGZO TFT
LCD
Photomask
Reliability

Access to Document

10.1002/sdtp.12102

Cite this

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title = "P-6: Development of Advanced Etch-Stop Structures Oxide TFT",

abstract = "Advanced Etch-Stop s tructure In-Ga-Zn-Oxide thin film transistor (A-ES TFT) using SD and IGZO layer self-aligned process is lower production cost, less parasitic capacitance than etch-stopped layer (ESL) Oxide TFTs. We also found excellent electrical properties and bias stability and fabricated a 12.5-inch liquid crystal panel using A-ES TFTs by only two photomask.",

keywords = "A-ES IGZO TFT, LCD, Photomask, Reliability",

author = "Fei SHANG and Yong XIANG and Rui WANG and Xiaolin WANG and Zhonghao HUANG and Zhuo XU and Shaoru LI and Zhulin LIU and Haijun QIU and Jianfeng YUAN and Taiye MIN and Xiaofeng MA and Yongliang ZHAO",

note = "Publisher Copyright: {\textcopyright} 2018, Blackwell Publishing Ltd. All rights reserved.; SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 ; Conference date: 20-05-2018 Through 25-05-2018",

year = "2018",

month = may,

doi = "10.1002/sdtp.12102",

language = "English",

volume = "49",

pages = "1212--1214",

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TY - JOUR

T1 - P-6: Development of Advanced Etch-Stop Structures Oxide TFT

AU - SHANG, Fei

AU - XIANG, Yong

AU - WANG, Rui

AU - WANG, Xiaolin

AU - HUANG, Zhonghao

AU - XU, Zhuo

AU - LI, Shaoru

AU - LIU, Zhulin

AU - QIU, Haijun

AU - YUAN, Jianfeng

AU - MIN, Taiye

AU - MA, Xiaofeng

AU - ZHAO, Yongliang

PY - 2018/5

Y1 - 2018/5

N2 - Advanced Etch-Stop s tructure In-Ga-Zn-Oxide thin film transistor (A-ES TFT) using SD and IGZO layer self-aligned process is lower production cost, less parasitic capacitance than etch-stopped layer (ESL) Oxide TFTs. We also found excellent electrical properties and bias stability and fabricated a 12.5-inch liquid crystal panel using A-ES TFTs by only two photomask.

AB - Advanced Etch-Stop s tructure In-Ga-Zn-Oxide thin film transistor (A-ES TFT) using SD and IGZO layer self-aligned process is lower production cost, less parasitic capacitance than etch-stopped layer (ESL) Oxide TFTs. We also found excellent electrical properties and bias stability and fabricated a 12.5-inch liquid crystal panel using A-ES TFTs by only two photomask.

KW - A-ES IGZO TFT

KW - LCD

KW - Photomask

KW - Reliability

UR - http://www.scopus.com/inward/record.url?scp=85054036164&partnerID=8YFLogxK

U2 - 10.1002/sdtp.12102

DO - 10.1002/sdtp.12102

M3 - Journal Article (refereed)

AN - SCOPUS:85054036164

SN - 0097-966X

VL - 49

SP - 1212

EP - 1214

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - SID Symposium, Seminar, and Exhibition 2018, Display Week 2018

Y2 - 20 May 2018 through 25 May 2018

ER -

P-6: Development of Advanced Etch-Stop Structures Oxide TFT

Abstract

Bibliographical note

Keywords

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