P-6: Development of Advanced Etch-Stop Structures Oxide TFT

Fei SHANG, Yong XIANG, Rui WANG, Xiaolin WANG, Zhonghao HUANG, Zhuo XU, Shaoru LI, Zhulin LIU, Haijun QIU, Jianfeng YUAN, Taiye MIN, Xiaofeng MA, Yongliang ZHAO

Research output: Journal PublicationsJournal Article (refereed)peer-review

1 Citation (Scopus)


Advanced Etch-Stop s tructure In-Ga-Zn-Oxide thin film transistor (A-ES TFT) using SD and IGZO layer self-aligned process is lower production cost, less parasitic capacitance than etch-stopped layer (ESL) Oxide TFTs. We also found excellent electrical properties and bias stability and fabricated a 12.5-inch liquid crystal panel using A-ES TFTs by only two photomask.

Original languageEnglish
Pages (from-to)1212-1214
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Issue number1
Early online date30 May 2018
Publication statusPublished - May 2018
Externally publishedYes
EventSID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States
Duration: 20 May 201825 May 2018

Bibliographical note

Publisher Copyright:
© 2018, Blackwell Publishing Ltd. All rights reserved.


  • LCD
  • Photomask
  • Reliability


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