Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

H. P. ZHOU^*, S. XU, M. XU, L. X. XU, D. Y. WEI, Y. XIANG, S. Q. XIAO

^*Corresponding author for this work

Research output: Journal Publications › Journal Article (refereed) › peer-review