Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells

Yiling SUN; Pingqi GAO; Jian HE; Suqiong ZHOU; Zhiqin YING; Xi YANG; Yong XIANG; Jichun YE

doi:10.1186/s11671-016-1505-7

Rear-Sided Passivation by SiN_x:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells

Yiling SUN, Pingqi GAO, Jian HE, Suqiong ZHOU, Zhiqin YING, Xi YANG, Yong XIANG^*, Jichun YE

^*Corresponding author for this work

Research output: Journal Publications › Journal Article (refereed) › peer-review

6 Citations (Scopus)

Abstract

Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiN_x:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiN_x:H layer boosted the open circuit voltage (V_oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiN_x:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PEDOT:PSS, rear-SiN_x:H, front PEDOT:PSS/rear-SiN_x:H, etc. are thoroughly investigated, in consideration of the process-related variations.

Original language	English
Article number	310
Number of pages	7
Journal	Nanoscale Research Letters
Volume	11
Issue number	1
Early online date	28 Jun 2016
DOIs	https://doi.org/10.1186/s11671-016-1505-7
Publication status	Published - Dec 2016
Externally published	Yes

Bibliographical note

This work is supported by the Zhejiang Provincial Natural Science Foundation (No. LY14F040005, LR16F040002), the National Natural Science Foundation of China (Grant No. 61404144, 51472044), the International S&T Cooperation Program of Ningbo (Grant No. 2015D10021), and the “Thousand Young Talents Program” of China, One Hundred Person Project of the Chinese Academy of Sciences, the Instrument Developing Project of the Chinese Academy of Sciences (No. yz201328).

Keywords

Hybrid solar cells
Photolithography
Si/PEDOT:PSS
SiN:H passivation

Access to Document

10.1186/s11671-016-1505-7Licence: CC BY

Cite this

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title = "Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells",

abstract = "Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (Voc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PEDOT:PSS, rear-SiNx:H, front PEDOT:PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.",

keywords = "Hybrid solar cells, Photolithography, Si/PEDOT:PSS, SiN:H passivation",

author = "Yiling SUN and Pingqi GAO and Jian HE and Suqiong ZHOU and Zhiqin YING and Xi YANG and Yong XIANG and Jichun YE",

note = "This work is supported by the Zhejiang Provincial Natural Science Foundation (No. LY14F040005, LR16F040002), the National Natural Science Foundation of China (Grant No. 61404144, 51472044), the International S&T Cooperation Program of Ningbo (Grant No. 2015D10021), and the “Thousand Young Talents Program” of China, One Hundred Person Project of the Chinese Academy of Sciences, the Instrument Developing Project of the Chinese Academy of Sciences (No. yz201328).",

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AU - ZHOU, Suqiong

AU - YING, Zhiqin

AU - YANG, Xi

AU - XIANG, Yong

AU - YE, Jichun

N1 - This work is supported by the Zhejiang Provincial Natural Science Foundation (No. LY14F040005, LR16F040002), the National Natural Science Foundation of China (Grant No. 61404144, 51472044), the International S&T Cooperation Program of Ningbo (Grant No. 2015D10021), and the “Thousand Young Talents Program” of China, One Hundred Person Project of the Chinese Academy of Sciences, the Instrument Developing Project of the Chinese Academy of Sciences (No. yz201328).

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N2 - Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (Voc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PEDOT:PSS, rear-SiNx:H, front PEDOT:PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

AB - Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (Voc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PEDOT:PSS, rear-SiNx:H, front PEDOT:PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

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