Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells

Yiling SUN, Pingqi GAO, Jian HE, Suqiong ZHOU, Zhiqin YING, Xi YANG, Yong XIANG*, Jichun YE

*Corresponding author for this work

Research output: Journal PublicationsJournal Article (refereed)peer-review

5 Citations (Scopus)


Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (Voc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PEDOT:PSS, rear-SiNx:H, front PEDOT:PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

Original languageEnglish
Article number310
Number of pages7
JournalNanoscale Research Letters
Issue number1
Early online date28 Jun 2016
Publication statusPublished - Dec 2016
Externally publishedYes

Bibliographical note

This work is supported by the Zhejiang Provincial Natural Science Foundation (No. LY14F040005, LR16F040002), the National Natural Science Foundation of China (Grant No. 61404144, 51472044), the International S&T Cooperation Program of Ningbo (Grant No. 2015D10021), and the “Thousand Young Talents Program” of China, One Hundred Person Project of the Chinese Academy of Sciences, the Instrument Developing Project of the Chinese Academy of Sciences (No. yz201328).


  • Hybrid solar cells
  • Photolithography
  • SiN:H passivation


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