Simulation study of a novel snapback free reverse-conducting SOI-LIGBT with embedded P-type schottky barrier diode

Bo YI, Jia LIN, Bingke ZHANG, Junji CHENG, Yong XIANG*

*Corresponding author for this work

Research output: Journal PublicationsJournal Article (refereed)peer-review

23 Citations (Scopus)

Abstract

In this article, a novel reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) with embedded diode and p-type Schottky Barrier Diode (p-SBD) is proposed. The two diodes are connected in series through a floating electrode, which provides a current path for carriers in reverse-conducting mode. Compared with the Separated Shorted-Anode RCLIGBT (SSA-RC-LIGBT), the proposed structure not only eliminates the snapback voltage ( ΔVSB) but also avoids the waste of device area. Therefore, the superior reverse recovery characteristics and excellent tradeoff relationship between ON-state voltage (VON) and turn-off loss (EOFF) are obtained. The reverse recovery charge of the proposed RC-LIGBT shows 43.9% and 63.2% reduction compared with those of the SSA-RC-LIGBT with LB (distance between the p+ collector and the shorted n+ collector) being 34 and 64 μm, respectively. The turn-off loss of the proposed RC-LIGBT at VON = 2.6 V is reduced by 68.2% and 87.1% compared with those of the SSA-RC-LIGBT with ΔVSB = 0.48 V and ΔVSB = 0.17 V, respectively. Moreover, the proposed RC-LIGBT has a self-adjusted collector injection efficiency under different temperatures to dramatically improve the Short Circuit Safe Operation Area (SCSOA).

Original languageEnglish
Article number9057517
Pages (from-to)2058-2065
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume67
Issue number5
DOIs
Publication statusPublished - May 2020
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

  • reverse recovery
  • Reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT)
  • Schottky barrier diode
  • turn-off loss

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