Thermoelectric properties of Pb-doped bismuth telluride thin films deposited by magnetron sputtering

Yang ZHOU; Liangliang LI; Qing TAN; Jing Feng LI

doi:10.1016/j.jallcom.2013.12.136

Thermoelectric properties of Pb-doped bismuth telluride thin films deposited by magnetron sputtering

Yang ZHOU, Liangliang LI^*, Qing TAN, Jing Feng LI

^*Corresponding author for this work

Research output: Journal Publications › Journal Article (refereed) › peer-review

65 Citations (Scopus)

Abstract

Nanocrystalline n-type bismuth telluride (Bi₂Te₃) thin films doped with lead (Pb) were deposited by radiofrequency magnetron sputtering. The effects of Pb doping on the carrier concentration and the thermoelectric properties of the Bi2Te3 thin film were investigated. Optimization of the carrier concentration significantly increased the Seebeck coefficient of the Bi₂Te₃ film and reduced the carrier thermal conductivity. These phenomena contributed to the enhancement of the thermoelectric properties of the Bi₂Te₃ film. Power factors of 2.50 and 2.15 mW K^-2 m^-1 were achieved at 473 K for the as-deposited and annealed Bi2Te3 films with Pb doping concentration of 0.38 at.%, respectively. The experimental data demonstrate that Pb doping can effectively control the carrier concentration of the n-type Bi₂Te₃ film. The Pb-doped Bi₂Te₃ film is a promising material for thermoelectric microdevices. © 2013 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	362-367
Number of pages	6
Journal	Journal of the Less-Common Metals
Volume	590
Early online date	21 Dec 2013
DOIs	https://doi.org/10.1016/j.jallcom.2013.12.136
Publication status	Published - 25 Mar 2014
Externally published	Yes

Funding

This work was supported in part by the National Natural Science Foundation of China (Grant No. 51102149), the National Basic Research Program of China (Grant No. 2013CB632504), the National High Technology Research and Development Program (Grant No. 2012AA051104), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry.

Keywords

Magnetron sputtering
Pb doping
Thermoelectric properties
Thin films

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10.1016/j.jallcom.2013.12.136

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title = "Thermoelectric properties of Pb-doped bismuth telluride thin films deposited by magnetron sputtering",

abstract = "Nanocrystalline n-type bismuth telluride (Bi2Te3) thin films doped with lead (Pb) were deposited by radiofrequency magnetron sputtering. The effects of Pb doping on the carrier concentration and the thermoelectric properties of the Bi2Te3 thin film were investigated. Optimization of the carrier concentration significantly increased the Seebeck coefficient of the Bi2Te3 film and reduced the carrier thermal conductivity. These phenomena contributed to the enhancement of the thermoelectric properties of the Bi2Te3 film. Power factors of 2.50 and 2.15 mW K-2 m-1 were achieved at 473 K for the as-deposited and annealed Bi2Te3 films with Pb doping concentration of 0.38 at.%, respectively. The experimental data demonstrate that Pb doping can effectively control the carrier concentration of the n-type Bi2Te3 film. The Pb-doped Bi2Te3 film is a promising material for thermoelectric microdevices. {\textcopyright} 2013 Elsevier B.V. All rights reserved.",

keywords = "Magnetron sputtering, Pb doping, Thermoelectric properties, Thin films",

author = "Yang ZHOU and Liangliang LI and Qing TAN and LI, {Jing Feng}",

year = "2014",

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doi = "10.1016/j.jallcom.2013.12.136",

language = "English",

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T1 - Thermoelectric properties of Pb-doped bismuth telluride thin films deposited by magnetron sputtering

AU - ZHOU, Yang

AU - LI, Liangliang

AU - TAN, Qing

AU - LI, Jing Feng

PY - 2014/3/25

Y1 - 2014/3/25

N2 - Nanocrystalline n-type bismuth telluride (Bi2Te3) thin films doped with lead (Pb) were deposited by radiofrequency magnetron sputtering. The effects of Pb doping on the carrier concentration and the thermoelectric properties of the Bi2Te3 thin film were investigated. Optimization of the carrier concentration significantly increased the Seebeck coefficient of the Bi2Te3 film and reduced the carrier thermal conductivity. These phenomena contributed to the enhancement of the thermoelectric properties of the Bi2Te3 film. Power factors of 2.50 and 2.15 mW K-2 m-1 were achieved at 473 K for the as-deposited and annealed Bi2Te3 films with Pb doping concentration of 0.38 at.%, respectively. The experimental data demonstrate that Pb doping can effectively control the carrier concentration of the n-type Bi2Te3 film. The Pb-doped Bi2Te3 film is a promising material for thermoelectric microdevices. © 2013 Elsevier B.V. All rights reserved.

AB - Nanocrystalline n-type bismuth telluride (Bi2Te3) thin films doped with lead (Pb) were deposited by radiofrequency magnetron sputtering. The effects of Pb doping on the carrier concentration and the thermoelectric properties of the Bi2Te3 thin film were investigated. Optimization of the carrier concentration significantly increased the Seebeck coefficient of the Bi2Te3 film and reduced the carrier thermal conductivity. These phenomena contributed to the enhancement of the thermoelectric properties of the Bi2Te3 film. Power factors of 2.50 and 2.15 mW K-2 m-1 were achieved at 473 K for the as-deposited and annealed Bi2Te3 films with Pb doping concentration of 0.38 at.%, respectively. The experimental data demonstrate that Pb doping can effectively control the carrier concentration of the n-type Bi2Te3 film. The Pb-doped Bi2Te3 film is a promising material for thermoelectric microdevices. © 2013 Elsevier B.V. All rights reserved.

KW - Magnetron sputtering

KW - Pb doping

KW - Thermoelectric properties

KW - Thin films

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U2 - 10.1016/j.jallcom.2013.12.136

DO - 10.1016/j.jallcom.2013.12.136

M3 - Journal Article (refereed)

AN - SCOPUS:84891857526

SN - 0925-8388

VL - 590

SP - 362

EP - 367

JO - Journal of the Less-Common Metals

JF - Journal of the Less-Common Metals

ER -

Thermoelectric properties of Pb-doped bismuth telluride thin films deposited by magnetron sputtering

Abstract

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Keywords

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