Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation

Kan OTANI; Xi CHEN; John W. HUTCHINSON; John F. CHERVINSKY; Michael J. AZIZ

doi:10.1063/1.2215269

Three-dimensional morphology evolution of SiO₂ patterned films under MeV ion irradiation

Kan OTANI, Xi CHEN, John W. HUTCHINSON, John F. CHERVINSKY, Michael J. AZIZ

Research output: Journal Publications › Journal Article (refereed) › peer-review

23 Citations (Scopus)

Abstract

We have measured the evolving three-dimensional (3D) morphology of patterned SiO 2 stripes on Si substrates induced by 3 MeV O ++ ion irradiation. We develop a 3D constitutive relation to describe anisotropic deformation, densification, and flow. We use this constitutive relation in a finite element model that simulates the experimental morphology evolution, and we find excellent agreement between simulated and measured profiles. The model should be useful in predicting morphology evolution in complex three-dimensional structures under MeV ion irradiation. © 2006 American Institute of Physics.

Original language	English
Article number	023535
Journal	Journal of Applied Physics
Volume	100
Issue number	2
DOIs	https://doi.org/10.1063/1.2215269
Publication status	Published - 15 Jul 2006
Externally published	Yes

Bibliographical note

This research was supported by the Harvard MRSEC under NSF-DMR-0213805. One of the authors (X.C.) acknowledges support from NSF-CMS-0407743. The authors thank J. A. Golovchenko, T. van Dillen, and M. L. Brongersma for helpful discussions.

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@article{7f3d36f64da0470a961336e71e789026,

title = "Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation",

abstract = "We have measured the evolving three-dimensional (3D) morphology of patterned SiO 2 stripes on Si substrates induced by 3 MeV O ++ ion irradiation. We develop a 3D constitutive relation to describe anisotropic deformation, densification, and flow. We use this constitutive relation in a finite element model that simulates the experimental morphology evolution, and we find excellent agreement between simulated and measured profiles. The model should be useful in predicting morphology evolution in complex three-dimensional structures under MeV ion irradiation. {\textcopyright} 2006 American Institute of Physics.",

author = "Kan OTANI and Xi CHEN and HUTCHINSON, {John W.} and CHERVINSKY, {John F.} and AZIZ, {Michael J.}",

note = "This research was supported by the Harvard MRSEC under NSF-DMR-0213805. One of the authors (X.C.) acknowledges support from NSF-CMS-0407743. The authors thank J. A. Golovchenko, T. van Dillen, and M. L. Brongersma for helpful discussions.",

year = "2006",

month = jul,

day = "15",

doi = "10.1063/1.2215269",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation

AU - OTANI, Kan

AU - CHEN, Xi

AU - HUTCHINSON, John W.

AU - CHERVINSKY, John F.

AU - AZIZ, Michael J.

N1 - This research was supported by the Harvard MRSEC under NSF-DMR-0213805. One of the authors (X.C.) acknowledges support from NSF-CMS-0407743. The authors thank J. A. Golovchenko, T. van Dillen, and M. L. Brongersma for helpful discussions.

PY - 2006/7/15

Y1 - 2006/7/15

N2 - We have measured the evolving three-dimensional (3D) morphology of patterned SiO 2 stripes on Si substrates induced by 3 MeV O ++ ion irradiation. We develop a 3D constitutive relation to describe anisotropic deformation, densification, and flow. We use this constitutive relation in a finite element model that simulates the experimental morphology evolution, and we find excellent agreement between simulated and measured profiles. The model should be useful in predicting morphology evolution in complex three-dimensional structures under MeV ion irradiation. © 2006 American Institute of Physics.

AB - We have measured the evolving three-dimensional (3D) morphology of patterned SiO 2 stripes on Si substrates induced by 3 MeV O ++ ion irradiation. We develop a 3D constitutive relation to describe anisotropic deformation, densification, and flow. We use this constitutive relation in a finite element model that simulates the experimental morphology evolution, and we find excellent agreement between simulated and measured profiles. The model should be useful in predicting morphology evolution in complex three-dimensional structures under MeV ion irradiation. © 2006 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=33746820546&partnerID=8YFLogxK

U2 - 10.1063/1.2215269

DO - 10.1063/1.2215269

M3 - Journal Article (refereed)

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

M1 - 023535

ER -

Three-dimensional morphology evolution of SiO₂ patterned films under MeV ion irradiation

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