Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation

Kan OTANI, Xi CHEN, John W. HUTCHINSON, John F. CHERVINSKY, Michael J. AZIZ

Research output: Journal PublicationsJournal Article (refereed)peer-review

22 Citations (Scopus)

Abstract

We have measured the evolving three-dimensional (3D) morphology of patterned SiO 2 stripes on Si substrates induced by 3 MeV O ++ ion irradiation. We develop a 3D constitutive relation to describe anisotropic deformation, densification, and flow. We use this constitutive relation in a finite element model that simulates the experimental morphology evolution, and we find excellent agreement between simulated and measured profiles. The model should be useful in predicting morphology evolution in complex three-dimensional structures under MeV ion irradiation. © 2006 American Institute of Physics.
Original languageEnglish
Article number023535
JournalJournal of Applied Physics
Volume100
Issue number2
DOIs
Publication statusPublished - 15 Jul 2006
Externally publishedYes

Bibliographical note

This research was supported by the Harvard MRSEC under NSF-DMR-0213805. One of the authors (X.C.) acknowledges support from NSF-CMS-0407743. The authors thank J. A. Golovchenko, T. van Dillen, and M. L. Brongersma for helpful discussions.

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